Mechanisms for forming protection layer on back side of wafer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Shyang Tsai, Wen-Han Tan, Wen-Lung Ho
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Abstract
Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side. The semiconductor device structure also includes devices formed on the front side of the substrate and interconnect structures formed on the devices. The semiconductor device structure further includes a protection layer formed on the back side of the substrate, and the protection layer has a thickness over about 10 A.
Claims15
A semiconductor device structure, comprising:
- a substrate having a front side and a back side, wherein the substrate is a wafer;
- devices formed on the front side of the substrate;
- interconnect structures formed on the devices;
- and
- a protection layer formed on the back side of the substrate, wherein the protection layer has a thickness over about 10 A, the protection layer is made of oxide, nitride or oxynitride, and the protection layer is formed on the backside of the wafer, and the back side of the wafer is completely covered by the protection layer, and an oxide layer with a plurality of openings is formed on and below the back side of the wafer, the plurality of openings face downward and away from the back side of the wafer, and the protection layer is formed within the openings of the oxide layer and further below the oxide layer.
Dependencies are inferred from the claim text.