Semiconductor structure with integrated passive structures
AssigneeInternational Business Machines Corporation
InventorsAnthony I. Chou, Arvind Kumar, Renee T. Mo, Shreesh Narasimha
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Abstract
A metal-oxide-semiconductor field-effect transistor (MOSFET) with integrated passive structures and methods of manufacturing the same is disclosed. The method includes forming a stacked structure in an active region and at least one shallow trench isolation (STI) structure adjacent to the stacked structure. The method further includes forming a semiconductor layer directly in contact with the at least one STI structure and the stacked structure. The method further includes patterning the semiconductor layer and the stacked structure to form an active device in the active region and a passive structure of the semiconductor layer directly on the at least one STI structure.
Claims12
A method comprising:
- forming a layered structure comprising:
- forming a high-k dielectric material on a substrate;
- forming a metal material on the high-k dielectric material;
- forming a semiconductor material over the metal material;
- and
- forming a masking layer over the semiconductor material;
- patterning the layered structure to form a stacked structure in an active region;
- forming shallow trench isolation (STI) structures adjacent to the stacked structure in the active region;
- removing the masking layer, after the formation of the STI structures;
- forming a semiconductor layer directly on the STI structures and the semiconductor material of the stacked structure;
- forming at least one passive structure by patterning of the semiconductor layer;
- and
- forming an active device by the patterning of the semiconductor layer and the stacked structure.
Dependencies are inferred from the claim text.