Semiconductor device, related manufacturing method, and related electronic device
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorChao Zheng
Life of this patent
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Abstract
A method for manufacturing semiconductor device may include the following steps: performing an etching process to remove a sacrificial layer from a first composite structure, wherein the first composite structure includes a first substrate structure; performing a heat treatment to release a gas from the first composite structure; performing a cleaning process to remove an oxide layer from the first composite structure; and combining the first composite structure with a second composite structure that includes a second substrate structure and an electronic component positioned on the second substrate substructure, such that the first substrate structure is combined with the second substrate structure to form an enclosure structure that encloses the electronic component.
Claims18
A method for manufacturing semiconductor device, the method comprising:
- performing an etching process to remove a sacrificial layer from a first composite structure, wherein the first composite structure includes a first substrate structure;
- performing a heat treatment to release a gas from the first composite structure;
- performing a cleaning process to remove an oxide layer from the first composite structure;
- and
- combining the first composite structure with a second composite structure that includes a second substrate structure and an electronic component positioned on the second substrate structure, such that the first substrate structure is combined with the second substrate structure to form an enclosure structure that encloses the electronic component.
Dependencies are inferred from the claim text.