Semiconductor device and method of manufacture thereof
AssigneeMitsubishi Electric Corporation
InventorsTakami Otsuki, Taichi Obara, Akira Goto
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Abstract
A semiconductor device includes an insulating substrate, a wiring pattern formed on the insulating substrate, a semiconductor chip secured to the wiring pattern, a junction terminal formed of the same material as the wiring pattern and electrically connected to the semiconductor chip, one end of the junction terminal being secured to the insulating substrate, the other end of the junction terminal extending upward away from the insulating substrate, and a control circuit for transmitting a control signal for the semiconductor chip, the control circuit being electrically connected to the junction terminal.
Claims11
A method of manufacturing a semiconductor device, comprising:
- placing an insulating substrate in at least one mold having at least one wiring pattern-forming cavity for forming a wiring pattern directly on said insulating substrate, and also having a junction terminal-forming cavity for forming a junction terminal directly on said insulating substrate and extending upward from said insulating substrate;
- pouring aluminum into the at least one wiring pattern-forming cavity and into the junction terminal-forming cavity, the poured aluminum being at least partially molten aluminum;
- and
- cooling the poured aluminum, thereby forming at a same time both the wiring pattern and the junction terminal directly on said insulating substrate, the junction terminal having an uninterrupted microstructure from one end formed directly on said insulating substrate to another end extending upward from said insulating substrate.
Dependencies are inferred from the claim text.