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US 9,425,063 B2Granted
Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device
AssigneeInfineon Technologies AG
InventorHans-Joachim Schulze
Life of this patent
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Abstract
A method of reducing an impurity concentration in a semiconductor body includes irradiating the semiconductor body with particles through a first side of the semiconductor body. The method further includes removing at least a part of impurities from an irradiated part of the semiconductor body by out-diffusion during thermal treatment in a temperature range between 450° C. to 1200° C.
Claims7
A method of reducing an impurity concentration in a semiconductor body, the method comprising:
- irradiating the semiconductor body with particles through a first side of the semiconductor body;
- after irradiating the semiconductor body, removing part of the impurity concentration from an irradiated part of the semiconductor body by out-diffusion caused by a separate thermal treatment in a temperature range between 700° C. to 1200° C. wherein a vertical distance between the first side and a bottom side of the irradiated part ranges between 10 μm and 200 μm and wherein an average concentration of the impurity in the first side is less than 60% of an average concentration of the impurity in the bottom side.
Dependencies are inferred from the claim text.