Methods of forming a pattern and methods of manufacturing a semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJi-Man Park, Hyo-Jin Yun, Jin-Seo Lee, Youn-Joung Cho, Jun-Hyun Cho, Jung-Sik Choi
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Abstract
A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.
Claims17
A method of forming a pattern, the method comprising:
- forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), wherein forming the underlayer on the etching target layer includes combining the PAG, and at least one of a cross linking agent and an adhesion reinforcing agent with polysiloxane to form a deposition source and providing the deposition source to the etching target layer using a carrier gas;
- forming a photoresist layer on the underlayer;
- irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern;
- and
- etching the etching target layer using the photoresist pattern as an etching mask.
A method of manufacturing a semiconductor device, the method comprising:
- forming an underlayer pattern on a substrate by a CVD process, the underlayer pattern including a silicon compound combined with a photoacid generator (PAG);
- forming a diode in a contact hole on the substrate, the contact hole being formed using the underlayer pattern as an etching mask;
- forming a lower electrode on the diode;
- forming a phase change material layer pattern on the lower electrode;
- and
- forming an upper electrode on the phase change material layer pattern.
A method of forming a pattern, the method comprising:
- forming an underlayer on an etching target layer, the underlayer including a silicon polymer having a photoacid generator (PAG) combined therewith, and further including at least one of a hydroxyl group-containing cross linking agent and an adhesion reinforcing agent;
- forming a photoresist layer on the underlayer;
- irradiating extreme ultraviolet (EUV) light onto the photoresist layer such that an acid generated from the PAG migrates to the photoresist layer;
- developing the photoresist layer to form a photoresist pattern;
- and
- etching the etching target layer using the photoresist pattern as an etching mask.
Dependencies are inferred from the claim text.