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US 9,425,058 B2Granted
Simplified litho-etch-litho-etch process
AssigneeApplied Materials, Inc.
InventorsHun Sang Kim, Jinhan Choi, Shinichi Koseki
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Abstract
Methods of patterning a blanket layer (a target etch layer) on a substrate are described. The methods involve multiple patterning steps of a mask layer several layers above the target etch layer. The compound pattern, made from multiple patterning steps, is later transferred in one set of operations through the stack to save process steps.
Claims15
A method of patterning a substrate, the method comprising
- forming a first layer of photoresist on a stack of materials on the substrate, wherein the stack of materials comprises a blanket top mask layer over a blanket etch stop layer over an anti-reflective coating over a target etch layer;
- patterning the first layer of photoresist to form a first pattern;
- etching the first pattern into the blanket top mask layer to form a first patterned top mask layer;
- removing any remaining material from the first layer of photoresist;
- forming a second layer of photoresist on the first patterned top mask layer;
- patterning the second layer of photoresist to form a second pattern;
- etching the second pattern into the first patterned top mask layer to form a second patterned top mask layer;
- and
- etching the first pattern and the second pattern into the stack of materials, wherein the first pattern and the second pattern are formed in the stack of materials during the same etching operations.
6 more elements
A method of patterning a substrate, the method comprising
- forming a first layer of photoresist on a stack of materials on the substrate, wherein the stack of materials comprises a blanket top mask layer over a blanket etch stop layer over an anti-reflective coating over a target etch layer;
- patterning the first layer of photoresist to form a first pattern;
- etching the first pattern into the blanket top mask layer to form a first patterned top mask layer;
- forming a second layer of photoresist on the first patterned top mask layer;
- patterning the second layer of photoresist to form a second pattern;
- etching the second pattern into the first patterned top mask layer to form a second patterned top mask layer;
- forming a third layer of photoresist on the second patterned top mask layer;
- patterning the third layer of photoresist to form a third pattern;
- etching the third pattern into the second patterned top mask layer to form a third patterned top mask layer;
- and
- etching the first pattern, the second pattern and the third pattern into the stack of materials, wherein the first pattern, the second pattern and the third pattern are formed in the stack of materials during the same etching operations.
8 more elements
Dependencies are inferred from the claim text.