Method for producing silicon wafer
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsTakuya Sasaki, Hiromasa Hashimoto, Kazuya Sato, Ayumu Sato
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Abstract
The present invention provides a method for producing a silicon wafer including a step of, after growing the oxide film on one surface of a raw material silicon wafer by chemical-vapor deposition, performing double-side polishing of the raw material silicon wafer in such a manner that a suede polishing pad or a velour polishing pad with an asker-C rubber hardness of 50° or more but less than 90° is used for the oxide-film surface.
Claims8
A method for producing a silicon wafer with a mirror-polished surface and an oxide-film surface by growing an oxide film on one surface of a raw material silicon wafer by chemical-vapor deposition and then polishing a surface of the raw material silicon wafer on a side on which the oxide film is not grown, the method comprising a step of
- after growing the oxide film, performing double-side polishing of the raw material silicon wafer in such a manner that a suede polishing pad or a velour polishing pad with an asker-C rubber hardness of 50° or more but less than 90° is used for the oxide-film surface, the suede polishing pad being obtained by wet coagulating and foaming urethane resin after the urethane resin is applied, the velour polishing pad being obtained by impregnating a nonwoven fabric with urethane resin, and an urethane closed-cell foam polishing pad or a velour polishing pad with an asker-C rubber hardness of 90° or more is used for the surface to be polished on the side on which the oxide film is not grown, the urethane closed-cell foam polishing pad or the velour polishing pad being obtained by impregnating a nonwoven fabric with urethane resin.
Dependencies are inferred from the claim text.