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US 9,425,054 B2Granted
Method for fabricating semiconductor device
AssigneeSK hynix Inc.
InventorsTae-Hyeok Lee, Kyu-Tae Park
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes: preparing a substrate; performing a pre-treatment including a first hydrogen annealing on a surface of the substrate; forming a gate dielectric layer over the substrate; performing a post-treatment including a second hydrogen annealing on the substrate including the gate dielectric layer; and forming a gate electrode over the gate dielectric layer.
Claims11
A method for fabricating a semiconductor device, comprising:
- preparing a substrate;
- performing a first oxidation treatment to form a sacrificial oxide layer on the surface of the substrate;
- performing a first hydrogen annealing to eliminate the sacrificial oxide layer;
- forming a gate dielectric layer over the substrate after the first hydrogen annealing;
- performing a post-treatment including a second hydrogen annealing on the substrate including the gate dielectric layer;
- and
- forming a gate electrode over the gate dielectric layer,
- wherein the performing of the post-treatment further includes performing a second oxidation treatment on the gate dielectric layer after the second hydrogen annealing.
5 more elements
A method for fabricating a semiconductor device, comprising:
- preparing a substrate;
- performing a pre-treatment including a first hydrogen annealing on a surface of the substrate;
- forming a first gate dielectric layer over the substrate;
- performing an intermediate process including a second hydrogen annealing on the substrate including the first gate dielectric layer;
- forming a second gate dielectric layer over the first gate dielectric layer;
- performing a post-treatment including a third hydrogen annealing on the substrate including the first and the second gate dielectric layers;
- and
- forming a gate electrode over the second gate dielectric layer.
5 more elements
Dependencies are inferred from the claim text.