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US 9,425,052 B2Granted
Reduced threshold voltage-width dependency in transistors comprising high-K metal gate electrode structures
AssigneeGlobalfoundries Inc.
InventorsThilo Scheiper, Jan Hoentschel, Steven Langdon
Life of this patent
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Abstract
Performance and/or uniformity of sophisticated transistors may be enhanced by incorporating a carbon species in the active regions of the transistors prior to forming complex high-k metal gate electrode structures. For example, a carbon species may be incorporated by ion implantation into the active region of a P-channel transistor and an N-channel transistor after selectively forming a threshold adjusted semiconductor material for the P-channel transistor, while the active region of the N-channel transistor is still masked.
Claims16
A method, comprising:
- performing a first common ion implantation process to implant a carbon species into first and second unmasked active regions of a semiconductor material for a first and a second transistor, respectively;
- after performing said first common ion implantation process, forming a masking layer that covers said second active region while leaving said first active region unmasked;
- recessing said first active region after performing said first common ion implantation process so as to thereby define a recess in said first active region;
- depositing a layer of threshold adjusting semiconductor material in said recess;
- with said masking layer in position above said second active region, introducing additional carbon species into said first active region after depositing said layer of threshold adjusting semiconductor material;
- forming a first gate electrode structure above said first active region and a second gate electrode structure above said second active region after introducing said additional carbon species, wherein each of said first and second gate electrode structures comprises a gate insulation layer comprising a high-k dielectric material, a portion of said carbon species, said additional carbon species, and said threshold adjusting semiconductor material in said first active region is positioned directly below said high-k dielectric material of said first gate electrode structure, and a portion of said carbon species in said second active region is positioned directly below said high-k dielectric material of said second gate electrode structure;
- and
- forming first drain and source regions of said first transistor in said first active region and second drain and source regions of said second transistor in said second active region.
5 more elements
A method, comprising:
- forming a first masking layer above a semiconductor material, wherein said first masking layer exposes a first active region in said semiconductor material while covering a second active region in said semiconductor material;
- with said first masking layer in position, performing a first ion implantation process to implant a carbon species into said first active region, wherein said carbon species is provided at a first surface region of said first active region;
- removing said first masking layer;
- forming a second masking layer that exposes said second active region in said semiconductor material while covering said first active region in said semiconductor material;
- with said second masking layer in position, performing a second ion implantation process to implant a carbon species into said second active region, wherein said carbon species is provided at a second surface region of said second active region;
- removing said second masking layer;
- forming a first gate electrode structure above said first active region and a second gate electrode structure above said second active region after removing said second masking layer, wherein each of said first and second gate electrode structures comprises a gate insulation layer comprising a high-k dielectric material, a portion of said carbon species in said first active region is positioned directly below said high-k dielectric material of said first gate electrode structure, and a portion of said carbon species in said second active region is positioned directly below said high-k dielectric material of said second gate electrode structure;
- and
- forming first drain and source regions of a first transistor in said first active region and second drain and source regions of a second transistor in said second active region.
6 more elements
A method, comprising:
- performing a first common ion implantation process to implant a carbon species into first and second unmasked active regions of a semiconductor material for a first and a second transistor, respectively;
- after performing said first common ion implantation process, forming a masking layer that covers said second active region while leaving said first active region unmasked;
- after forming said masking layer, depositing a layer of threshold adjusting semiconductor material in said first active region;
- with said masking layer in position above said second active region, performing a second ion implantation process so as to implant additional carbon species into at least said first active region;
- forming a first gate electrode structure above said threshold adjusting semiconductor material in said first active region and a second gate electrode structure above said second active region, wherein each of said first and second gate electrode structures comprises a gate insulation layer comprising a high-k dielectric material, a portion of said carbon species and said additional carbon species in said first active region is positioned directly below said high-k dielectric material of said first gate electrode structure, and a portion of said carbon species in said second active region is positioned directly below said high-k dielectric material of said second gate electrode structure;
- and
- forming first drain and source regions of said first transistor in said first active region and second drain and source regions of said second transistor in said second active region.
4 more elements
A method, comprising:
- performing a first common ion implantation process to implant a carbon species into first and second unmasked active regions of a semiconductor material for a first and a second transistor, respectively, wherein said carbon species is provided at a first surface region of said first active region and at a second surface region of said second active region;
- after performing said first common ion implantation process, forming a masking layer that covers said second active region while leaving said first active region unmasked;
- after forming said masking layer, depositing a layer of threshold adjusting semiconductor material in said first active region while introducing a carbon species into said threshold adjusting semiconductor material at some point during the process of depositing said layer of threshold adjusting semiconductor material;
- removing said masking layer;
- forming a first gate electrode structure above said threshold adjusting semiconductor material in said first active region and a second gate electrode structure above said second active region, wherein each of said first and second gate electrode structures comprises a gate insulation layer comprising a high-k dielectric material, a portion of carbon species in said first active region is positioned directly below said high-k dielectric material of said first gate electrode structure, and a portion of said carbon species in said second active region is positioned directly below said high-k dielectric material of said second gate electrode structure;
- and
- forming first drain and source regions of said first transistor in said first active region and second drain and source regions of said second transistor in said second active region.
4 more elements
Dependencies are inferred from the claim text.