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US 9,425,050 B2Granted
System and method for providing an electron blocking layer with doping control
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsJoseph M. Freund, John M. DeLucca
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Abstract
Aspects of the disclosure pertain to a system and method for providing an electron blocking layer with doping control. The electron blocking layer is included in a semiconductor assembly. The electron blocking layer includes a lithium aluminate layer. The lithium aluminate layer promotes reduced diffusion of magnesium into a layer stack of the semiconductor assembly.
Claims22
A semiconductor assembly, comprising:
- a base substrate;
- a layer stack formed upon the base substrate;
- and
- an electron blocking layer formed upon the layer stack,
- wherein the electron blocking layer includes a magnesium-doped layer as well as a lithium aluminate layer sandwiched between the magnesium-doped layer and the layer stack so as to promote reduced diffusion of magnesium into the layer stack.
2 more elements
A semiconductor assembly, comprising:
- a layer stack, the layer stack including a substrate and a cladding layer, the cladding layer being formed upon the substrate, the layer stack further including one or more barrier layers, a first barrier layer included in the one or more barrier layers being formed upon the cladding layer, the layer stack including one or more quantum well layers, a quantum well layer included in the one or more quantum well layers being formed upon the first barrier layer;
- and
- an electron blocking layer formed upon the layer stack,
- wherein the layer stack is an active layer of the semiconductor assembly configured to provide light emission, and wherein the electron blocking layer includes a magnesium-doped layer as well as a lithium aluminate layer positioned between and separating the magnesium-doped layer from the layer stack thereby promoting reduced diffusion of magnesium into the layer stack, the lithium aluminate layer being formed upon an aluminum gallium nitride layer, the aluminum gallium nitride layer being formed upon a second barrier layer included in the one or more barrier layers, the second barrier layer being formed upon the quantum well layer.
1 more element
A method of producing a semiconductor assembly, comprising:
- forming a base substrate;
- forming a layer stack upon the base substrate;
- and
- forming an electron blocking layer upon the layer stack,
- wherein the electron blocking layer includes a magnesium-doped layer and a lithium aluminate layer, wherein the lithium aluminate layer is in direct contact with at least some of the magnesium-doped layer and provides a physical separation between the magnesium-doped layer and the layer stack thereby at least partially inhibiting diffusion of magnesium into the layer stack.
2 more elements
An apparatus, comprising:
- a housing;
- and
- a semiconductor assembly at least substantially contained within the housing of the apparatus, the semiconductor assembly including:
- a base substrate;
- a layer stack formed upon the base substrate;
- and
- an electron blocking layer formed upon the layer stack,
- wherein the electron blocking layer includes magnesium-doped portion as well as a lithium aluminate layer that promotes reduced diffusion of magnesium into the layer stack by virtue of being positioned between the magnesium-doped portion and the layer stack.
5 more elements
Dependencies are inferred from the claim text.