Cut first self-aligned litho-etch patterning

A method of performing a self-aligned litho-etch (SALE) process, comprising:

• providing a substrate comprising a tri-layer hard mask having an upper-layer, a central-layer, and a lower-layer overlying a semiconductor body;
• forming a first cut layer over the upper-layer to define a first cut position for a first plurality of shapes of a SALE design layer;
• forming a second cut layer opening within the upper-layer to define a second cut position for a second plurality of shapes of the SALE design layer;
• etching the upper-layer according to a first patterned photoresist layer and the first cut layer to form a first plurality of openings corresponding to the first plurality of shapes;
• depositing a spacer material within the second cut layer opening to form a second cut layer, wherein the spacer material continuously extends between sidewalls of the upper-layer within the second cut layer opening;
• etching the upper-layer according to a second patterned photoresist layer and the spacer material comprising the second cut layer to define a second plurality of openings corresponding to the second plurality of shapes;
• and
• etching the central-layer according to the first plurality of openings and the second plurality of openings.

A method of performing a self-aligned litho-etch (SALE) process, comprising:

• forming a multi-layer hard mask over a substrate;
• forming a first cut layer over the multi-layer hard mask to define a first cut position for a first plurality of shapes of a design layer;
• forming a patterned photoresist layer over a pattern transfer layer that overlies the first cut layer;
• forming a second cut layer over the multi-layer hard mask to define a second cut position for a second plurality of shapes of the design layer;
• etching the multi-layer hard mask to define the first plurality of shapes, which are cut according to the first cut layer and the patterned photoresist layer;
• and
• etching the multi-layer hard mask to define the second plurality of shapes, which are cut according to the second cut layer.