Hybrid silicon germanium substrate for device fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKa-Hing Fung
Life of this patent
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Abstract
Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first buffer layer, a second buffer layer, a n-type transistor structure, and a p-type transistor structure. The first buffer layer having a first germanium concentration is formed on a substrate. The second buffer layer having a second germanium concentration is formed on the substrate, the second germanium concentration being larger than the first germanium concentration. The n-type transistor structure is formed on the first buffer layer, and the p-type transistor structure is formed on the second buffer layer.
Claims19
A semiconductor device structure, comprising:
- a substrate;
- a first buffer layer having a first germanium concentration formed on the substrate and formed with a recessed region thereinto;
- a second buffer layer having a second germanium concentration formed in the recessed region in the first buffer laver, the second germanium concentration being larger than the first germanium concentration;
- a n-type transistor structure formed on the first buffer layer;
- and
- a p-type transistor structure formed on the second buffer layer.
A semiconductor device structure comprising:
- a substrate having a surface;
- a pair of transistors spaced apart from each other in a horizontal direction substantially parallel to the surface of the substrate;
- and
- a pair of buffer layers, each of which is formed between the substrate and a respective one of the transistors, and each of which includes a buffer layer material, wherein the buffer layer materials include the same matter but in different concentrations, wherein one of the buffer layers is formed thereinto with a recessed region in which the other of the buffer layers is formed.
Dependencies are inferred from the claim text.