Method of forming laminated film and forming apparatus thereof
AssigneeTokyo Electron Limited
InventorsTomoyuki Obu, Masaki Kurokawa, Hiroki Iriuda
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Abstract
A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film.
Claims11
A method of forming a laminated film comprising:
- forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber by supplying a hydrogen gas into the reaction chamber forming a hydrogen atmosphere and supplying a silicon source, an oxidizing agent, and a hydrogen gas into the reaction chamber after the hydrogen atmosphere is formed within the reaction chamber;
- and
- forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber,
- wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form the laminated film including the silicon oxynitride film and the silicon oxide film, and
- wherein forming the silicon oxide film by supplying the silicon source, the oxidizing agent, and the hydrogen gas is consecutively performed plural times to form the laminated film of the silicon oxide film and the silicon oxynitride film on the plurality of target objects.
A method of forming a laminated film comprising:
- forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber by simultaneously supplying a silicon source and an oxidizing agent into the reaction chamber;
- and
- forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber,
- wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form the laminated film including the silicon oxynitride film and the silicon oxide film, and
- wherein forming the silicon oxide film by supplying the silicon source, the oxidizing agent, and the hydrogen gas is consecutively performed plural times to form the laminated film of the silicon oxide film and the silicon oxynitride film on the plurality of target objects.
A method of forming a laminated film comprising:
- forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber by simultaneously supplying a silicon source and an oxidizing agent into the reaction chamber;
- and
- forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber,
- wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form the laminated film including the silicon oxynitride film and the silicon oxide film,
- wherein forming the silicon oxide film includes supplying a hydrogen gas and an oxygen gas into the reaction chamber to form a hydrogen and oxygen atmosphere within the reaction chamber after the silicon oxide film is formed by supplying the silicon source and the oxidizing agent, and
- wherein forming the silicon oxide film by supplying the hydrogen gas and an oxygen gas and then supplying the hydrogen gas and an oxygen gas is consecutively performed plural times to form the laminated film of the silicon oxide film and the silicon oxynitride film on the plurality of target objects.
Dependencies are inferred from the claim text.