Back to results
US 9,425,039 B2Granted
Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsKazuhiro Harada, Arito Ogawa
Life of this patent
Estimating the term…
Abstract
Provided is a technique of controlling a work function of a metal film. A composite metal nitride film is formed on a substrate present in a process chamber by alternately supplying a first source and a second source to the substrate, wherein the first source contains a first metal element, the second source contains an ethyl ligand and a second metal element that is different from the first metal element, and a bond between the second metal element and a nitrogen element in the composite metal nitride film has crystallinity.
Claims6
A method of manufacturing a semiconductor device, comprising:
- (a) supplying a first metal source including a first metal element and a halogen element to a substrate accommodated in a process chamber and exhausting the first metal source from the process chamber while heating the substrate to a temperature ranging from 300° C. to 350° C. to form on the substrate a first metal element-containing layer including the first metal element and the halogen element by a chemisorption reaction;
- and
- (b) supplying a second metal source including an ethyl ligand, nitrogen and a second metal element different from the first metal element to the substrate and exhausting the second metal source from the process chamber while heating the substrate to a temperature ranging from 300° C. to 350° C. to form on the substrate a composite metal nitride layer including the first metal element, the second metal element and nitrogen by a chemical vapor growth reaction between the first metal element-containing layer and the second metal source,
- wherein (a) and (b) are repeated a plurality of times to form on the substrate a composite metal nitride film including the first metal element, the second metal element and nitrogen with a bond between the second metal element and nitrogen having crystallinity.
1 more element
A substrate processing apparatus, comprising:
- a process chamber configured to accommodate a substrate;
- a supply system configured to supply a first metal source including a first metal element and a halogen element, a second metal source including an ethyl ligand, nitrogen and a second metal element different from the first metal element into the process chamber;
- a heater configured to heat the process chamber;
- an exhaust system configured to exhaust the process chamber;
- and
- a controller configured to control the supply system, the heater and the exhaust system to perform:
- (a) supplying the first metal source into the process chamber accommodating the substrate and exhausting the first metal source from the process chamber while heating the substrate to a temperature ranging from 300° C. to 350° C. to form on the substrate a first metal element-containing layer including the first metal element and the halogen element by a chemisorption reaction;
- and
- (b) supplying the second metal source into the process chamber and exhausting the second metal source from the process chamber while heating the substrate to a temperature ranging from 300° C. to 350° C. to form on the substrate a composite metal nitride layer including the first metal element, the second metal element;
- and nitrogen by a chemical vapor growth reaction between the first metal element-containing layer and the second metal source,
- wherein (a) and (b) are repeated a plurality of times to form on the substrate a composite metal nitride film including the first metal element, the second metal element and nitrogen with a bond between the second metal element and nitrogen having crystallinity.
8 more elements
A non-transitory computer-readable recording medium storing a program causing a computer to perform:
- (a) supplying a first metal source including a first metal element and a halogen element to a substrate accommodated in a process chamber and exhausting the first metal source from the process chamber while heating the substrate to a temperature ranging from 300° C. to 350° C. to form on the substrate a first metal element-containing layer including the first metal element and the halogen element by a chemisorption reaction;
- and
- (b) supplying a second metal source including an ethyl ligand, nitrogen and a second metal element different from the first metal element to the substrate and exhausting the second metal source from the process chamber
- while heating the substrate to a temperature from 300° C. to 350° C. to form on the substrate a composite metal nitride layer including the first metal element, the second metal element and nitrogen by a chemical vapor growth reaction between the first metal element-containing layer and the second metal source,
- wherein (a) and (b) are repeated a plurality of times to form on the substrate a composite metal nitride film including the first metal element, the second metal element and nitrogen with a bond between the second metal element and nitrogen having crystallinity.
2 more elements
Dependencies are inferred from the claim text.