Method and apparatus for forming silicon oxycarbonitride film, silicon oxycarbide film and silicon oxynitride film
AssigneeTokyo Electron Limited
InventorAkira Shimizu
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Abstract
A method for forming a silicon oxycarbonitride film includes supplying a gas containing a silicon precursor having an oxygen-containing group onto a process surface of a workpiece, supplying a gas containing a carbon precursor onto the process surface, and supplying a nitriding gas onto the process surface subjected to the supplying a gas containing a silicon precursor and the supplying a gas containing a carbon precursor. The silicon oxycarbonitride film is formed on the process surface by the supplying the gas containing the silicon precursor, the supplying gas containing the carbon precursor and the supplying a nitriding gas without performing an oxidation process.
Claims7
A method for forming a silicon oxycarbonitride film, comprising:
- supplying a gas containing a silicon precursor having an oxygen-containing group onto a process surface of a workpiece such that silicon (Si) bonded with oxygen (O) is adsorbed or deposited on the process surface;
- supplying a gas containing a carbon precursor onto the process surface such that some of substituents bonded to Si are substituted with hydrocarbon groups (R);
- and
- supplying a nitriding gas onto the process surface subjected to the supplying a gas containing a silicon precursor and the supplying a gas containing a carbon precursor such that some of hydrocarbon groups (R) bonded to Si are substituted with amino groups (NH),
- wherein a silicon oxycarbonitride film is formed on the process surface by the supplying the gas containing the silicon precursor, the supplying gas containing the carbon precursor and the supplying a nitriding gas without performing an oxidation process.
Dependencies are inferred from the claim text.