Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsYusei Kuwabara, Nobuaki Shindo, Sachie Ishibashi, Takahiko Kato, Noboru Maeda
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsYusei Kuwabara, Nobuaki Shindo, Sachie Ishibashi, Takahiko Kato, Noboru Maeda
Estimating the term…
A plasma processing apparatus includes an upper electrode arranged at a processing chamber and including a plurality of gas supplying zones, a branch pipe including a plurality of branch parts, an addition pipe connected to at least one of the branch parts, and a plurality of gas pipes that connect the branch parts to the gas supplying zones. The upper electrode supplies a processing gas including a main gas to the processing chamber via the gas supplying zones. The branch pipe divides the processing gas according to a predetermined flow rate ratio and supplies the divided processing gas to the gas supplying zones. The addition pipe adds an adjustment gas. A gas flow path of the gas pipe connected to the branch part to which the addition pipe is connected includes a bending portion for preventing a gas concentration variation according to an adjustment gas-to-main gas molecular weight ratio.
A plasma processing apparatus that turns a gas supplied to a processing chamber into plasma using a high frequency power and performs a plasma process on a processing object, the plasma apparatus comprising:
A plasma processing apparatus that turns a gas supplied to a processing chamber into plasma using a high frequency power and performs a plasma process on a processing object, the plasma apparatus comprising:
Dependencies are inferred from the claim text.