Pattern forming method, electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition, resist film, and method for manufacturing electronic device, and electronic device using the same

A pattern forming method, comprising:

• (a) forming a film by using an electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition containing a resin (A) having a repeating unit represented by Formula (1-0) and a repeating unit represented by Formula (1-2), a compound (B) capable of generating an acid upon irradiation with an electron beam-sensitive or extreme ultraviolet ray, and a solvent (C);
• (b) exposing the film by using an electron beam or extreme ultraviolet ray;
• and
• (c) developing the exposed film by using a developer containing an organic solvent to form a negative pattern,
• wherein a content of the repeating unit represented by Formula (1-0) is 45 mol % or more based on a whole repeating units in the resin (A):
• wherein in Formula (1-0),
• R1 and R2 each independently represent an alkyl group,
• R11 and R12 each independently represent an alkyl group,
• R13 represents a hydrogen atom or an alkyl group,
• R11 and R12 may be bound with each other to form a ring, and R11 and R13 may be bound with each other to form a ring,
• Ra represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom, and L1 represents a single bond or a divalent linking group,
• in Formula (1-2),
• Rb represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom,
• R3 represents a substituent,
• n1 represents an integer of 1 or 2, n2 represents an integer of 0 to 4,
• when n2 represents an integer of 2 to 4, R3's may be bound with each other to form a ring, and
• L2 represents a single bond, —COO— or —CONR4—, and R4 represents a hydrogen atom or an alkyl group.