Process-compensated HBT power amplifier bias circuits and methods
AssigneeSkyworks Solutions, Inc.
InventorsDavid Steven Ripley, Philip John Lehtola, Peter J. Zampardi, Jr., Hongxiao Shao, Tin Myint Ko, Matthew Thomas Ozalas
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Abstract
The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.
Claims18
A system for biasing a power amplifier, the system comprising:
- a first die including a power amplifier circuit, a semiconductor resistor, and an isolation feature, the power amplifier circuit including a transistor formed on a semiconductor, the semiconductor resistor formed from one or more layers as a layer stack device on the semiconductor that includes the transistor, the isolation feature configured to isolate the semiconductor resistor from the transistor, the semiconductor resistor configured to sense a beta parameter of the power amplifier circuit, the beta parameter dependent on characteristics of the first die;
- and
- a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on a measurement of the beta parameter sensed by the semiconductor resistor of the first die.
A wireless device comprising:
- a transceiver configured to process RF signals;
- an antenna in communication with the transceiver configured to facilitate transmission of an amplified RF signal;
- a power amplifier including a transistor formed on a semiconductor of a first die, the power amplifier connected to the transceiver and configured to generate the amplified RF signal, the first die including a semiconductor resistor and an isolation feature, the semiconductor resistor formed from one or more layers as a layer stack device on the semiconductor that includes the transistor, the isolation feature configured to isolate the semiconductor resistor from the transistor, the semiconductor resistor configured to sense a beta parameter of the power amplifier, the beta parameter dependent on characteristics of the first die;
- and
- a bias circuit disposed on a second die and interconnected to the power amplifier, the bias circuit configured to generate a bias signal for the power amplifier based at least in part on a measurement of the beta parameter sensed by the semiconductor resistor of the first die.
A power amplifier module comprising:
- a packaging substrate configured to receive a plurality of components;
- a first die mounted on the packaging substrate, the first die including a power amplifier circuit, a semiconductor resistor, and an isolation feature, the power amplifier circuit including a transistor formed on a semiconductor, the semiconductor resistor formed from one or more layers as a layer stack device on the semiconductor that includes the transistor, the isolation feature configured to isolate the semiconductor resistor from the transistor, the semiconductor resistor configured to sense a beta parameter of the power amplifier circuit, the beta parameter dependent on characteristics of the first die;
- and
- a second die mounted on the packaging substrate and interconnected with the first die, the second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on a measurement of the beta parameter sensed by the semiconductor resistor of the first die.
Dependencies are inferred from the claim text.