US 9,419,075 B1 · Wafer substrate removal

Abstract

A semiconductor device is formed on a semiconductor substrate, including a primary portion of the substrate. An active component of the semiconductor device is disposed in the primary portion of the substrate. An interconnect region is formed on a top surface of the substrate. Semiconductor material is removed from the substrate in an isolation region, which is separate from the primary portion of the substrate; the isolation region extends from the top surface of the substrate to a bottom surface of the substrate. A dielectric replacement material is formed in the isolation region. The semiconductor device further includes an isolated component which is not disposed in the primary portion of the substrate. The dielectric replacement material in the isolation region separates the isolated component from the primary portion of the substrate.

Claims11

Dependent claims

A semiconductor device, comprising:

a substrate comprising a semiconductor material, the substrate having a primary portion;
an active component disposed in the primary portion of the substrate;
an interconnect region disposed on a top surface of the substrate;
an isolation region separate from the primary portion of the substrate, the isolation region extending from the top surface of the substrate to a bottom surface of the substrate, the isolation region being free of the semiconductor material, the interconnect region being continuous over the isolation region;
a dielectric replacement material disposed in the isolation region;
and
an isolated component separated from the primary portion of the substrate by the dielectric replacement material in the isolation region.

4 more elements

Dependencies are inferred from the claim text.

Wafer substrate removal

Life of this patent

Wafer substrate removal

Life of this patent

Abstract

Claims11