US 9,416,298 B2 · Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant

Abstract

A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

Claims12

Dependent claims

A process for manufacturing semiconductor devices, the process comprising:

chemical-mechanically polishing a substrate or a layer comprising a III-V material in the presence of a chemical-mechanical polishing composition (Q1), which comprises
(A) inorganic particles, organic particles, or a mixture or a composite thereof,
(B) an amphiphilic non-ionic surfactant comprising
(b1) a hydrophobic group;
and
(b2) a hydrophilic group, which is a polyoxyalkylene group comprising
(b22) oxyalkylene monomer units derived from substituted oxiranes (X), which comprise substituents of alkyl groups comprising 1 to 10 carbon atoms;
and
(M) an aqueous medium;
wherein a pH of the polishing composition (Q1) is from 1 to 7.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/402,975Filed 21 May 2013 · us provisional application

Priority

23 May 2012

Published

US 2015/0175845 A125 Jun 2015

Granted

16 Aug 2016

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

C09G 1/02
Polishing compositions: containing abrasives or grinding agents
H10P 50/00
Etching of wafers, substrates or parts of devices
H10P 52/00
Grinding, lapping or polishing of wafers, substrates or parts of devices
H10P 52/402
Chemomechanical polishing [CMP]: of semiconductor materials

Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant

Life of this patent

Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant

Life of this patent

Abstract

Claims12