Optical tuning of light emitting semiconductor junctions

A light emitting semiconductor junction device, comprising:

• a light emitting junction;
• a first electrical contact coupled to a first side of the junction;
• a second electrical contact coupled to a second side of the junction;
• and
• a region of set straining material that exerts a strain on the junction and alters both:
• (i) an optical polarization, and (ii) emission wavelength of the junction;
• wherein:
• the first electrical contact and the second electrical contact provide a current path to the light emitting junction independent of the region of set straining material;
• the region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction;
• and
• the light emitting semiconductor junction device comprises a three-five alloy.

A light emitting semiconductor junction device, comprising:

• a light emitting junction;
• a first electrical contact coupled to a first side of the junction;
• a second electrical contact coupled to a second side of the junction;
• and
• a region of set straining material that exerts a strain on the junction and alters both:
• (i) an optical polarization, and (ii) emission wavelength of the junction;
• wherein:
• the region of set straining material is not on a current path between said first electrical contact and said second electrical contact;
• said region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction;
• the light emitting semiconductor junction device comprises a three-five alloy.