Semiconductor devices including superlattice depletion layer stack and related methods

A semiconductor device comprising:

• an alternating stack of a plurality of superlattices and a plurality of bulk semiconductor layers on a substrate, each superlattice including a plurality of stacked group of layers, each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, the bulk semiconductor layers between respective superlattices being doped with alternating dopant conductivity types defining a p-n junction;
• spaced apart source and drain regions in an upper bulk semiconductor layer of the alternating stack of superlattices and bulk semiconductor layers;
• and
• a gate on the upper bulk semiconductor layer between the spaced apart source and drain regions and defining a depleted channel between the source and drain regions and above the p-n junction;
• wherein the semiconductor device is substantially devoid of an oxide layer between the channel and the substrate.

A semiconductor device comprising:

• an alternating stack of a plurality of superlattices and a plurality of bulk silicon layers on a substrate, each superlattice including a plurality of stacked group of layers, each group of layers of the superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions, the bulk semiconductor layers between respective superlattices being doped with alternating dopant conductivity types defining a p-n junction;
• spaced apart source and drain regions in an upper bulk silicon layer of the alternating stack of superlattices and bulk silicon layers;
• and
• a gate on the upper bulk silicon layer between the spaced apart source and drain regions and defining a depleted channel between the source and drain regions and above the p-n junction;
• wherein the semiconductor device is substantially devoid of an oxide layer between the channel and the substrate.