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AssigneeSTMicroelectronics S.r.l.
InventorsFerruccio Frisina, Giuseppe Abbondanza
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An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.
A reaction chamber for manufacturing a semiconductor material wafer, the reaction chamber comprising:
A reaction chamber comprising:
A reaction chamber, comprising:
Dependencies are inferred from the claim text.