# US 9,406,487 B2 · Plasma enhanced chemical vapor deposition (PECVD) source > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,406,487 B2 - Document ID: US9406487B2 - Status: Granted - Kind: B2 - Application number: 14/138,833 - Filed: 2013-12-23 - Published: 2014-07-03 - Granted: 2016-08-02 - Earliest claimed: 2012-12-28 - Assignees: Sputtering Components, Inc. - Applicants: Sputtering Components, Inc. - Inventors: Daniel Theodore Crowley; Patrick Lawrence Morse; William A. Meredith, Jr.; John Robert German; Michelle Lynn Neal - Web page: https://patentgrep.com/patent/US9406487B2 ## CPC - H01J 37/3405: {Magnetron sputtering} - H01J 37/3417: {Arrangements} - H01J 37/3438: {Electrodes other than cathode} - H01J 37/3444: {Associated circuits} - H01J 37/345: {Magnet arrangements in particular for cathodic sputtering apparatus (material of magnets or magnets in general H01F1/00, H01F7/00)} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract One embodiment is directed to a plasma source comprising a body in which a cavity is formed and at least two self-contained magnetron assemblies disposed within the cavity. The magnetron assemblies are mutually electrically isolated from each other and from the body. In one implementation of such an embodiment, the self-contained magnetron assemblies comprise closed-drift magnetron assemblies. Other embodiments are disclosed. ## Claims ### Claim 1 A plasma source comprising: a body in which a cavity is formed; and at least two self-contained magnetron assemblies disposed within the cavity; wherein the magnetron assemblies are mutually electrically isolated from each other and from the body. ### Claim 2 (depends on 1) The plasma source of claim 1, wherein the magnetron assemblies comprise closed-draft magnetron assemblies. ### Claim 3 (depends on 1) The plasma source of claim 1, wherein each of the magnetron assemblies comprises at least one electrode, at least one magnet, and a cooling sub-system. ### Claim 4 (depends on 3) The plasma source of claim 3, wherein at least one of the magnetron assemblies comprises a core to which at least one of the electrode and the magnet are connected. ### Claim 5 (depends on 4) The plasma source of claim 4, wherein the cooling sub-system in at least one of the magnetron assemblies comprises at least one channel formed in the core. ### Claim 6 (depends on 4) The plasma source of claim 4, wherein the cooling sub-system in at least one of the magnetron assemblies comprises at least one channel formed in a target portion of at least one electrode included in the magnetron assembly. ### Claim 7 (depends on 1) The plasma source of claim 1, further comprising a manifold or conduit to distribute a process gas within the plasma source. ### Claim 8 (depends on 7) The plasma source of claim 7, wherein the manifold or conduit to distribute the process gas comprises a binary manifold. ### Claim 9 (depends on 1) The plasma source of claim 1, further comprising a manifold or conduit to distribute a precursor gas. ### Claim 10 (depends on 1) The plasma source of claim 1, wherein at least one power supply is connected between the magnetron assemblies so that respective electrodes in the magnetron assemblies are alternately biased to have polarities opposite to one another. ### Claim 11 (depends on 10) The plasma source of claim 10, wherein the at least one power supply comprises at least one of an alternating current power supply and a bi-polar pulsed power supply. ### Claim 12 (depends on 1) The plasma source of claim 1, wherein plasma source is configured so that the body of the plasma source is at one of a floating potential or ground potential. ### Claim 13 (depends on 1) The plasma source of claim 1, wherein plasma source is configured so that the body of the plasma source is biased to a particular non-ground potential. ### Claim 14 (depends on 1) The plasma source of claim 1, wherein the magnetron assemblies comprise planar magnetrons. ### Claim 15 A method of sourcing plasma comprising: supplying a process gas to a cavity formed within a body of a plasma source, the plasma source comprising at least two self-contained magnetron assemblies disposed within the cavity, wherein the magnetron assemblies are mutually electrically isolated from each other and from the body; alternately biasing respective electrodes in the magnetron assemblies to have polarities opposite to one another; and directing the plasma substantially towards a substrate. ### Claim 16 (depends on 15) The method of claim 15, further comprising directing a supply of precursor gas into the plasma in the vicinity of the substrate. ### Claim 17 (depends on 15) The method of claim 15, wherein the magnetron assemblies comprise closed-draft magnetron assemblies. ### Claim 18 (depends on 15) The method of claim 15, wherein supplying the process gas comprises supplying the process gas using a binary manifold. ### Claim 19 (depends on 15) The method of claim 15, wherein supplying the precursor gas comprises supplying the precursor gas using a binary manifold. ### Claim 20 A plasma source comprising: a body in which a cavity is formed; at least one self-contained magnetron assembly disposed within the cavity; at least two non-magnetron electrodes disposed within the cavity; and an alternating current (AC) power supply having an output coil; wherein the at least two non-magnetron electrodes are mutually electrically isolated from each other and from the body incorporating the cavity; and wherein the magnetron assembly is connected to a center tap of the output coil of the AC power supply and the non-magnetron electrodes are connected to end taps of the output coil of the AC power supply.