Adaptive read error recovery for memory devices
AssigneeSeagate Technology LLC
InventorsMai A. Ghaly, Ara Patapoutian
Life of this patent
Estimating the term…
Abstract
Some embodiments involve a method of detecting an error of a memory device. It is determined whether the detected error is a catastrophic error. If it is determined that the error is a catastrophic error, an error recovery process is bypassed. Some aspects involve a method of detecting an error of a memory device. It is determined whether a counter value is above a predetermined value. If it is determined that the counter value is above the predetermined value an error recovery process is bypassed and a redundant parity recovery process is performed.
Claims19
A method, comprising:
- detecting an error of a solid state memory device in response to a determination that a read to the memory failed;
- determining whether a counter value is above a predetermined value;
- if it is determined that the counter value is above the predetermined value:
- determining that the error is a catastrophic error;
- and
- bypassing a voltage error recovery process configured to adjust the threshold voltage used to access the memory;
- and
- if it is determined that the counter value is not above the predetermined value:
- determining if a threshold voltage used to access the memory has been shifted;
- if it is determined that the threshold voltage used to access the memory has been shifted:
- determining a direction of the threshold voltage;
- and
- initiating a type of voltage error recovery process based on the direction of the voltage shift.
A method, comprising:
- detecting an error of a solid state memory device in response to a determination that a read to the memory failed;
- determining whether a counter value is above a predetermined value;
- if it is determined that the counter value is above the predetermined value:
- determining that the error is a catastrophic error;
- bypassing a voltage error recovery process, the voltage error recovery process configured to adjust the threshold voltage used to access the memory;
- and
- performing a redundant parity recovery process;
- if it is determined that the counter value is not above the predetermined value:
- determining if a threshold voltage used to access the memory has been shifted;
- if it is determined that the threshold voltage used to access the memory has been shifted:
- determining a direction of the threshold voltage shift;
- and
- initiating a type of voltage error recovery process based on the direction of the voltage shift.
An apparatus comprising:
- a controller capable of being coupled to a solid state memory, the controller configured to perform:
- detecting an error of the memory based on a determination that a read to the memory failed;
- determining whether a counter value is above a predetermined value;
- if it is determined that the counter value is above the predetermined value:
- determining that the error is a catastrophic error;
- and
- bypassing a voltage error recovery process, the voltage error recovery process configured to adjust the threshold voltage used to access the memory;
- if it is determined that the counter value is not above the predetermined value:
- determining if a threshold voltage used to access the memory has been shifted;
- if it is determined that the threshold voltage used to access the memory has been shifted:
- determining a direction of the threshold voltage shift;
- and
- initiating a type of voltage error recovery process based on the direction of the voltage shift.
Dependencies are inferred from the claim text.