Field emission devices and methods of manufacturing emitters thereof
AssigneesSamsung Electronics Co., Ltd., Kumoh National Institute of Technology Industry-Academic Cooperation Foundation
InventorsDonggu Lee, Shanghyeun Park, Yongchul Kim, Ilhwan Kim, Taewon Jeong
Life of this patent
Estimating the term…
Abstract
A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.
Claims5
A method of manufacturing an emitter, the method comprising:
- forming a graphene thin film on a surface of a conductive film;
- forming a stack structure in which the graphene thin film and the conductive film are repeatedly stacked;
- forming a sintered structure by molding and sintering the stack structure and a conductive powder, wherein the sintered structure has a form in which the grapheme thin film is in a conductor;
- and
- partially removing the conductor in a length direction of the graphene thin film.
Dependencies are inferred from the claim text.