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US 9,391,225 B1Granted
Two-dimensional APDs and SPADs and related methods
AssigneeSandia Corporation
InventorsPaul Davids, Douglas Chandler Trotter, Christopher DeRose
Life of this patent
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Abstract
Avalanche photodiodes (APDs) and single photon avalanche detectors (SPADs) are provided with a lateral multiplication region that provides improved amplification through increased impact ionization.
Claims36
A device comprising:
- an optical waveguide configured to transport an optical signal;
- a germanium absorption layer, disposed over a charge region of a silicon surface layer, to receive and absorb photons from the optical signal, and to generate one or more mobile carriers from the absorbed photons;
- a silicon surface layer comprising,
- a charge region of a first conductivity type, wherein the charge region underlies an entirety of the germanium absorption layer, and
- a multiplication region, laterally adjacent to the charge region, to receive the one or more mobile carriers and generate an amplified photocurrent;
- and
- a heterojunction layer between the germanium absorption layer and the silicon surface layer, wherein the multiplication region is disjointed from the heterojunction layer.
4 more elements
A method comprising:
- transporting an optical signal in an optical waveguide connected to a germanium absorption layer;
- receiving and absorbing photons from the optical signal, and generating one or more mobile carriers from the absorbed photons at the germanium absorption layer disposed over a charge region of a first conductivity type of a silicon surface layer;
- transporting the one or more mobile carriers through a heterojunction layer;
- and
- receiving the one or more mobile carriers and generating an amplified photocurrent at a multiplication region, laterally adjacent to the charge region, of the silicon surface layer, wherein the multiplication region is disjointed from the heterojunction layer.
2 more elements
A device comprising:
- an optical waveguide configured to transport an optical signal;
- a germanium absorption layer, disposed over a charge region of a silicon surface layer, to receive and absorb photons from the optical signal, and to generate one or more mobile carriers from the absorbed photons;
- a silicon surface layer comprising,
- a charge region of a first conductivity type, and
- a multiplication region, laterally adjacent to the charge region, to receive the one or more mobile carriers and generate an amplified photocurrent;
- and
- a heterojunction layer between the germanium absorption layer and the silicon surface layer, wherein the multiplication region is disjointed from the heterojunction layer.
4 more elements
Dependencies are inferred from the claim text.