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US 9,391,108 B2Granted
Photoelectric conversion apparatus and imaging system using the photoelectric conversion apparatus
AssigneeCanon Kabushiki Kaisha
InventorTakanori Watanabe
Life of this patent
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Abstract
In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion extends from a reference surface including the light receiving surface of a photoelectric conversion element into a semiconductor substrate at a level equal to or deeper than the depth of the semiconductor region in comparison with the semiconductor region.
Claims15
A photoelectric conversion apparatus comprising:
- a plurality of pixels;
- and
- an isolation portion including an insulator and defining a plurality of active regions arranged along a first direction, wherein
- each of said pixels comprises a photoelectric conversion portion including a first semiconductor region of a first conductivity type, a charge storage portion including a second semiconductor region of the first conductivity type configured to hold a charge generated by the photoelectric conversion portion, a floating diffusion portion to which a charge of the charge storage portion is transferred, and a first gate electrode extending over the second semiconductor region,
- the first semiconductor region and the second semiconductor region of corresponding one of the plurality of pixels are arranged along the first direction in each of the plurality of active regions, and
- the first semiconductor region extends deeper than the second semiconductor region in a first cross section including the first direction.
3 more elements
Dependencies are inferred from the claim text.