Semiconductor device and method of forming an embedded SOP fan-out package

A method of making a semiconductor device, comprising:

• providing a substrate;
• disposing a first semiconductor die below a first surface of the substrate;
• disposing a second semiconductor die over a second surface of the substrate;
• forming a bump over the second surface of the substrate including a side surface of the bump adjacent to a side surface of the first semiconductor die;
• and
• disposing an encapsulant contacting the side surface of the bump and the side surface of the second semiconductor die and around the first semiconductor die, second semiconductor die, and bump, wherein an active surface of the second semiconductor die and a portion of the bump are exposed from the encapsulant.

A semiconductor device, comprising:

• a semiconductor package including,
• (a) a substrate,
• (b) a first semiconductor die disposed below a first surface of the substrate,
• (c) a first encapsulant deposited below the first semiconductor die and completely covering the first surface of the substrate, and
• (d) a plurality of first bumps disposed directly on a second surface of the substrate opposite the first surface;
• a second semiconductor die disposed over the second surface of the substrate between the first bumps including a back surface of the second semiconductor die oriented toward the second surface of the substrate;
• a second encapsulant deposited around the substrate, first semiconductor die, first encapsulant, first bumps, and second semiconductor die, wherein an active surface opposite the back surface of the second semiconductor die and a portion of the first bumps are exposed from the second encapsulant;
• a first insulating layer formed over the second encapsulant and the active surface of the second semiconductor die;
• a first conductive layer formed over and contacting a contact pad of the second semiconductor die, the exposed portion of the first bumps, and the first insulating layer;
• and
• an interconnect structure formed over the first conductive layer, wherein a height of the semiconductor device is less than 1 millimeter (mm).

A semiconductor device, comprising:

• a semiconductor package including a first semiconductor die and a first encapsulant disposed under and around the first semiconductor die;
• a second semiconductor die disposed over a surface of the semiconductor package;
• a plurality of bumps formed over and contacting the surface of the semiconductor package and outside a footprint of the second semiconductor die, wherein the second semiconductor die is disposed directly between the bumps;
• and
• a second encapsulant deposited under and around the semiconductor package, bumps, and second semiconductor die, wherein an active surface of the second semiconductor die and a portion of the bumps are exposed from the second encapsulant.

A semiconductor device, comprising:

• a substrate;
• a first semiconductor die disposed below a first surface of the substrate;
• a second semiconductor die disposed over a second surface of the substrate opposite the first surface;
• a bump disposed over the second surface of the substrate and outside a footprint of the second semiconductor die including a side surface of the bump disposed adjacent to a side surface of the second semiconductor die;
• and
• an encapsulant contacting the side surface of the bump and the side surface of the second semiconductor die and deposited around the first semiconductor die, second semiconductor die, and bump, wherein an active surface of the second semiconductor die and a portion of the bump are exposed from the encapsulant.