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US 9,379,328 B1Granted
Thin-film electro devices based on derivatized poly (benzo-isimidazobenzophenanthroline) ladder polymers
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsAlfred J. Baca, William W. Lai
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Abstract
A method for making electronic devices based on derivatized ladder polymer poly(benzo-isimidazobenzophenanthroline) (BBL) including photovoltaic modules and simple thin film transistors in planar and mechanically flexible and stretchable constructs.
Claims19
A transistor having thin-film material, comprising:
- at least one substrate;
- at least one gate metal contact;
- thin film material(s) having at least one organic semiconducting material layer, wherein at least one said organic semiconducting layer is Py-BBL, at least one insulator, wherein said gate metal is associated with said insulator, at least one source electrode and at least one drain electrode, wherein said insulator is associated with said source electrode and said insulator is associated with said drain electrode;
- and
- wherein said gate metal is associated with said substrate, wherein said organic semiconducting layer is associated with said source electrode, associated with said drain electrode, and associated with said insulator.
2 more elements
A transistor having thin-film material, comprising:
- at least one substrate;
- at least one gate metal contact, wherein said gate metal is associated with said substrate;
- thin film material(s) having at least one insulator, wherein said gate metal is associated with said insulator;
- at least one drain electrode;
- at least one n-source material to form at least one n-source channel;
- at least one p-source material to form at least one p-source channel, wherein said n-source channel and said p-source channel are associated with said drain electrode and with said insulator, wherein said insulator is associated with said source electrode and said insulator is associated with said drain electrode;
- and
- at least one organic semiconducting layer, wherein at least one said organic semiconducting layer is Py-BBL, wherein said organic semiconducting layer is associated with said n-channel source and said drain, wherein said organic semiconducting layer is associated with said p-channel source and said drain.
5 more elements
Dependencies are inferred from the claim text.