Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting device package using the same

A semiconductor light emitting device having a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, a second electrode layer, a multilayered reflective structure, a first electrode layer, and a support substrate sequentially laminated, wherein:

• the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity-type semiconductor layer;
• the first electrode layer comprises at least one contact hole electrically connected to the first conductivity-type semiconductor layer, electrically insulated from the second conductivity-type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity-type semiconductor layer;
• and
• the multilayered reflective structure covering lateral surfaces of the at least one contact hole located between the at least one contact hole and the active layer, and the multilayered reflective structure exposing bottom surfaces of the at least one contact hole, wherein the multilayered reflective structure comprises a plurality of insulating layers, and wherein the plurality of insulating layers having different refractive indices are alternately stacked.

A semiconductor light emitting device having a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, a second electrode layer, a multilayered reflective structure, a first electrode layer, and a support substrate sequentially laminated, wherein:

• the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity-type semiconductor layer;
• the first electrode layer comprises at least one contact hole electrically connected to the first conductivity-type semiconductor layer, electrically insulated from the second conductivity-type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity-type semiconductor layer;
• the multilayered reflective structure disposed between the first electrode layer and the active layer, covering lateral surfaces of the at least one contact hole and exposing bottom surfaces of the at least one contact hole, wherein the multilayered reflective structure comprises a plurality of insulating layers, and wherein the plurality of insulating layers having different refractive indices are alternately stacked;
• and
• the exposed area of the second electrode layer is a region exposed by a via hole formed through the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer.