Pulse plasma apparatus and drive method thereof

A drive control method of a pulse plasma apparatus comprising:

• supplying first RF power in a continuous wave mode to an upper electrode of a process chamber by a source RF generator during a first time period;
• determining a first matching capacitance value so as to match a plasma impedance of the process chamber with an impedance of the source RF generator;
• supplying second RF power in the continuous wave mode to the upper electrode by the source RF generator during a second time period;
• determining a second matching capacitance value so as to match the plasma impedance of the process chamber with the impedance of the source RF generator;
• calculating a third matching capacitance value by a controller based on the first matching capacitance value and the second matching capacitance value;
• transmitting the third matching capacitance value to the first matcher by the controller;
• and
• alternately supplying first level RF pulse power having a first duty cycle and second level RF pulse power having a second duty cycle to the upper electrode by the source RF generator.

A pulse plasma apparatus comprising:

• a process chamber including an upper electrode and a lower electrode;
• a source RF generator configured to supply source RF powers to the upper electrode, the source RF powers including first RF power in a continuous wave form during a first time period, second RF power in a continuous waver form during a second time period, and the first and second level RF pulse powers supplied in an alternating manner during a third time period, the first level RF pulse power having a first duty cycle, the second level RF pulse power having a second duty cycle, the third time period following the second time period, the second time period following the first time period;
• a bias RF generator configured to supply bias RF power to the lower electrode, the bias RF power having a third duty cycle;
• a reflected power indicator configured to indicate reflection RF power, the reflection RF power being RF power reflected from the process chamber;
• an impedance matching network configured to match a plasma impedance of the process chamber with an impedance of the source RF generator during the first time period and during the second time period;
• and
• a controller configured to,
• calculate first and second matching capacitance values that match the plasma impedance of the plasma process chamber with the impedance of the source RF generator during the first and second time periods, respectively,
• calculate a third matching capacitance value based on the first and second matching capacitance values, and the first and second duty cycles, and
• control the impedance matching network based on the third matching capacitance value.