Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
AssigneeD2S, Inc.
InventorsAkira Fujimura, Harold Robert Zable
Life of this patent
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Abstract
A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.
Claims25
A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction comprising the step of:
- determining a plurality of shaped beam charged particle beam shots for an exposure pass, wherein the plurality of shaped beam shots, when used in a charged particle beam writer, produces a dosage on a resist-coated surface, wherein the dosage on the resist-coated surface forms a pattern on the resist-coated surface, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter, and wherein the step of determining is performed using one or more computing hardware processors.
A method for manufacturing a surface using charged particle beam lithography, the method comprising the steps of:
- determining a plurality of shaped beam shots for a plurality of exposure passes;
- and
- forming a pattern on the surface, wherein the surface has been coated with a resist, wherein a charged particle beam writer produces a dosage on the resist-coated surface using the plurality of shaped beam shots, wherein the dosage on the resist-coated surface forms the pattern, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold,
- wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, and wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter.
A method for manufacturing an integrated circuit using an optical lithographic process, the optical lithographic process using a reticle manufactured with charged particle beam lithography, the method comprising the steps of:
- determining a plurality of shaped beam shots for an exposure pass;
- and
- forming a pattern on the reticle, wherein the reticle has been coated with a resist, wherein a charged particle beam writer produces a dosage on the resist-coated reticle using the plurality of shaped beam shots, wherein the dosage on the resist-coated reticle forms the pattern, wherein the pattern on the reticle comprises a pattern perimeter, wherein the resist comprises a resist threshold,
- wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, and wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, and wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter.
A system for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction comprising:
- a device configured to determine a plurality of shaped beam charged particle beam shots for an exposure pass, wherein the plurality of shaped beam shots, when used in a charged particle beam writer, produces a dosage on a resist-coated surface, wherein the dosage on the resist-coated surface forms a pattern on the surface, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, and wherein the device configured to determine calculates a dose margin from the plurality of shaped beam shots, and wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter.
Dependencies are inferred from the claim text.