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US 9,368,470 B2Granted
Coated bonding wire and methods for bonding using same
AssigneeFreescale Semiconductor, Inc.
InventorsChu-Chung Lee, Burton J. Carpenter, Tu-Anh N. Tran
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Abstract
A semiconductor device includes a bond formed on a bond pad. The bond is formed of a wire that includes a central core of conductive metal, a first coating over the central core of conductive metal that is more chemically active than the conductive metal, and a second coating over the central core of conductive metal that is less chemically active than the central core of conductive metal.
Claims19
A semiconductor device comprising:
- a packaging mold compound;
- a wire bond embedded in the packaging mold compound, wherein
- a wire of the wire bond includes a central core of electrically conductive material, a sacrificial coating over the central core of electrically conductive material, and a second coating over the central core of conductive material, and
- the central core of electrically conductive material includes at least one of a group consisting of copper and silver, and the sacrificial coating is formed of a material that has a lower reduction potential than the central core of electrically conductive material and the second coating, and the second coating has a higher reduction potential than the central core of electrically conductive material.
1 more element
A semiconductor device comprising:
- a packaging mold compound;
- and
- a wire bond embedded in the packaging mold compound, wherein a wire of the wire bond includes:
- a central core of electrically conductive material,
- a sacrificial coating over the central core of electrically conductive material,
- a second coating over the central core of conductive material, and
- a third coating, and
- the sacrificial coating is formed of a material that has a lower reduction potential than the central core of electrically conductive material and the second coating, and the second coating has a higher reduction potential than the central core of electrically conductive material, and the second coating is in direct contact with the central core of electrically conductive material, and the sacrificial coating is between the second coating and the third coating.
5 more elements
A semiconductor device comprising:
- a packaging mold compound;
- and
- a wire bond embedded in the packaging mold compound, wherein a wire of the wire bond includes:
- a central core of electrically conductive material, a sacrificial coating over the central core of electrically conductive material, a second coating over the central core of conductive material, and a third coating, and
- the sacrificial coating is formed of a material that has a lower reduction potential than the central core of electrically conductive material and the second coating, and the second and third coatings have a higher reduction potential than the central core of electrically conductive material, and the second coating is in direct contact with the central core of electrically conductive material, and the sacrificial coating is between the second coating and the third coating.
2 more elements
Dependencies are inferred from the claim text.