Optical to optical methods enhancing the sensitivity and resolution of ultraviolet, electron beam and ion beam devices
AssigneeAttofemto, Inc.
InventorPaul L. Pfaff
Life of this patent
Estimating the term…
Abstract
In decreasing the electron beam duration required for increased time resolution, the average beam current decreases, degrading measurement sensitivity and limiting the spatial and time resolution of electron beam and ion beam devices. Optical to optical measurements using two imaging devices permits non-invasive or non-destructive enhancements permits enhanced spatial and time measurements and enables a new regime of internal device and process evaluation and quality control in integrated circuit (IC) manufacture, at every stage from the initial wafer to the point at which the wafer is diced into individual ICs.
Claims22
An optical image detection method for enhancing time and spatial resolution in internal integrated circuit testing in at least one phase of evaluation and manufacture, using a first infrared or optical imaging device that is sensitive to an incident electron beam or ion beam or X-ray beam or ultraviolet illumination which stimulates a secondary electron emission or creates a photocurrent or changes in electric field or stresses within or acting upon the first imaging device, and a second infrared imaging device that is illuminated by light incident to the first imaging device which is reflected to the second imaging device which images optical changes in phase or polarization or amplitude or birefringence or intensity within the first imaging device, the method comprising:
- (a) imposing a first optical beam over an area comprising at least one of the following:
- an incident electron beam, an incident ion beam, or a X-ray beam or an optical illumination modulating the optical beam incident to the first imaging device;
- (b) adjusting the modulation of the incident optical beam relative to the duration or intensity or movement of the electron or ion beam or X-ray beam or an ultraviolet illumination to enhance the optical sampling time resolution of the first optical beam, or to examine the spatial attributes of a feature which is shaped or determined by the incident electron beam, or ion beam, or an incident ultraviolet illumination, or the effects thereof,
- (c) and, illuminating the second infrared imaging device by light incident to the first imaging device which is reflected to the second imaging device to image optical changes in phase or polarization or amplitude or birefringence or intensity within the first imaging device.
An optical image detection method for enhancing time and spatial resolution in internal integrated circuit testing in at least one phase of evaluation and manufacture, using a first infrared or optical imaging device that is sensitive to an incident electron or ion beam or X-ray beam or an ultraviolet illumination which stimulates a secondary electron emission or creates a photocurrent or changes in electric field or stresses within or acting upon the first imaging device, and a second infrared imaging device that is illuminated by light incident to the first imaging device which is reflected to the second imaging device which images optical changes in phase or polarization or amplitude or birefringence or intensity or optical interference within the first imaging device, the method comprising:
- (a) splitting and adjusting an optical reference beam incident to the first infrared or optical imaging device, imposing an object optical beam over a spatial area of the incident electron or ion beam or X-ray beam or an illumination optically modulating the object optical beam and adjusting the reference beam to interfere with the object beam incident to the first infrared or optical imaging device;
- (b) directing the optical object beam to a spatial area of stimulation of secondary electron or photon emission to interfere with the electron beam or ion beam incident to the first infrared or optical imaging device;
- or
- (c) adjusting the optical object beam relative to the spatial area of the incident beam comprising at least one of the following:
- an electron beam, or an ion beam, or X-ray beam, or an ultraviolet illumination to enhance the resolution of a semiconductor material, integrated circuit or wafer being shaped or determined by the electron or ion beam or ultraviolet illumination, or determining the effects thereof upon the spatial area of the semiconductor material, the integrated circuit or wafer being shaped, determined, or tested,
- (d) and, illuminating the second infrared imaging device by light incident to the first imaging device which is reflected to the second imaging device to image optical changes in phase or polarization or amplitude or birefringence or intensity or optical interference within the first imaging device.
An optical image detection method for enhancing time and spatial resolution in internal integrated circuit testing in at least one phase of evaluation and manufacture, using a first infrared or optical imaging device that is sensitive to at least an incident electron beam, or an incident ion beam, or an incident X-ray beam, or an incident ultraviolet illumination which stimulates a secondary electron emission, or creates a photocurrent or changes in electric field, or generates stresses within or acting upon the first imaging device, and a second infrared imaging device that is illuminated by a first object light beam incident to the first imaging device which interferes with a first reference beam split from the first object light beam by the second imaging device which images optical changes in phase or polarization or amplitude or birefringence or intensity or optical interference within the first imaging device, the method comprising;
- (a) imposing the first object light beam over a spatial area of the incident electron or ion beam or X-ray beam or an illumination optically modulating the first reference beam and adjusting the first reference beam to interfere with the first object light beam incident to the first infrared or optical imaging device;
- (b) directing the first reference beam to interfere with a second object light beam incident to the first infrared or optical imaging device;
- (c) adjusting the incident first object light beam relative to a first detector to enhance the first detector resolution of the integrated circuit, wafer, or material being shaped or determined by the incident electron beam, incident ion beam, or ultraviolet illumination or the effects thereof, and
- (d) illuminating the second infrared imaging device by a second reference light beam split from the first reference beam incident to the first imaging device which interferes with the first object light beam incident to the first imaging device at the second imaging device, the second imaging device detects the optical changes in the object beam incident to the first imagine device comprising at least a change in phase or polarization or amplitude or birefringence or intensity or optical interference within the first imaging device.
Dependencies are inferred from the claim text.