Compound semiconductor single crystal ingot for photoelectric conversion devices, photoelectric conversion device, and production method for compound semiconductor single crystal ingot for photoelectric conversion devices

Abstract

The present invention increases the conversion efficiency of a photoelectric conversion element that uses cadmium zinc telluride or cadmium telluride (Cd(Zn)Te) compound semiconductor single crystals containing a group 1A element as an impurity. A heat-resistant pot is filled with raw material and a group 1A element, which is reacted with a portion of the raw material, and the container is heated, thereby melting the raw material into a melt and diffusing the dissociated group 1A element in the melt, producing single crystals from the melt. Compound semiconductor single crystals for photoelectric conversion elements having a hole concentration of 4×1015 cm−3 to 1×1018 cm−3 are produced in this manner. Using a substrate (2) that has been cut out from the compound semiconductor single crystals for photoelectric conversion elements enables the conversion efficiency of a photoelectric conversion element (10) to be increased.

Dependencies are inferred from the claim text.