Method of manufacturing a light emitting, power generating or other electronic apparatus

A method of fabricating an electronic device, the method comprising:

• depositing at least one first conductor;
• depositing a plurality of diodes suspended in a liquid or gel, each diode of the plurality of diodes comprising:
• a light emitting or absorbing region having a lateral dimension between 10 microns to 40 microns and a height between 2 to 7 microns;
• a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height less than 6 microns;
• and
• a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height less than 6 microns;
• wherein each diode of the plurality of diodes has a lateral dimension between 10 to 50 microns and a height between 5 to 25 microns;
• and
• wherein each diode of the plurality of diodes comprises at least one inorganic semiconductor selected from the group consisting essentially of:
• silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, and AlInGaSb, and mixtures or combinations thereof;
• depositing at least one dielectric layer;
• and
• depositing at least one second conductor over the dielectric layer.

A method of fabricating an electronic device, the method comprising:

• depositing at least one substantially optically transmissive first conductor over a substantially optically transmissive base, the at least one substantially optically transmissive first conductor comprising one or more compounds selected from the group consisting essentially of:
• indium tin oxide (ITO), antimony tin oxide (ATO), polyethylene-dioxithiophene, and combinations or mixtures thereof;
• depositing a plurality of diodes suspended in a liquid or gel, the liquid or gel comprising a mixture of at least one solvent and at least one viscosity modifier, each diode of the plurality of diodes comprising:
• a light emitting or absorbing region having a lateral dimension between 10 microns to 40 microns and a height between 2 to 7 microns;
• a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height less than 6 microns;
• and
• a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height less than 6 microns;
• wherein each diode of the plurality of diodes has a lateral dimension between 10 to 50 microns and a height between 5 to 25 microns;
• and
• wherein each diode of the plurality of diodes comprises at least one inorganic semiconductor selected from the group consisting essentially of:
• silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, and AlInGaSb, and mixtures or combinations thereof;
• depositing at least one dielectric layer;
• and
• depositing at least one second conductor over the dielectric layer.