Method for manufacturing an integrated MEMS device
AssigneeAsia Pacific Microsystems, Inc.
InventorJerwei Hsieh
Life of this patent
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Abstract
An integrated MEMS device and its manufacturing method are provided. In the manufacturing method, the sacrificial layer is used to integrate the MEMS wafer and the circuit wafer. The advantage of the present invention comprises preventing films on the circuit wafer from being damaged during process. By the manufacturing method, a mechanically and thermally stable structure material, for example: monocrystalline silicon and polysilicon, can be used. The integrated MEMS device manufactured can also possess the merit of planar top-surface topography with high fill factor. The manufacturing method is especially suitable for manufacturing MEMS array device.
Claims14
A method for manufacturing an integrated MEMS device, comprising:
- (a) providing a device wafer and forming a patterned first sacrificial layer and a first structural layer on the device wafer sequentially;
- (b) providing a circuit wafer having at least a patterned first bonding layer thereon;
- (c) bonding the first bonding layer on the circuit wafer to the device wafer;
- (d) patterning the device wafer to form a patterned second structural layer and to expose a portion of the first sacrificial layer;
- and
- (e) removing the first sacrificial layer;
- wherein, between the step (a) and step (b), further comprising a step (a′):
- forming a patterned second bonding layer on the first structural layer;
- and
- in the step (c) further comprising a step of bonding the first bonding layer to the second bonding layer.
A method for manufacturing an integrated MEMS device, comprising:
- (a) providing a device wafer and forming a patterned first sacrificial layer on the device wafer;
- (b) providing a circuit wafer having at least a patterned first bonding layer thereon;
- (c) bonding the first bonding layer on the circuit wafer to the device wafer;
- (d) patterning the device wafer to form a patterned second structural layer and to expose a portion of the first sacrificial layer;
- and
- (e) removing the first sacrificial layer;
- wherein, between the step (a) and step (b), further comprising a step (a′):
- forming a patterned second bonding layer outside the first sacrificial layer region;
- and
- in the step (c) further comprising a step of bonding the first bonding layer to the second bonding layer.
A method for manufacturing an integrated MEMS device, comprising:
- (a) providing a device wafer and forming a patterned first sacrificial layer and a first structural layer on the device wafer sequentially;
- (b) providing a circuit wafer having at least a patterned first bonding layer thereon;
- (c) bonding the first bonding layer on the circuit wafer to the device wafer;
- (d) patterning the device wafer to form a patterned second structural layer and to expose a portion of the first sacrificial layer;
- and
- (e) removing the first sacrificial layer;
- wherein the first sacrificial layer and the first structural layer are patterned by photolithography and etching processes.
A method for manufacturing an integrated MEMS device, comprising:
- (a) providing a device wafer and only forming a patterned first sacrificial layer on the device wafer;
- (b) providing a circuit wafer having at least a patterned first bonding layer thereon;
- (c) bonding the first bonding layer on the circuit wafer to the device wafer;
- (d) patterning the device wafer to form a patterned second structural layer and to expose a portion of the first sacrificial layer;
- and
- (e) removing the first sacrificial layer.
Dependencies are inferred from the claim text.