Multi-wavelength surface plasmon laser and optoelectronic integrated circuit including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJaesoong Lee, Jineun Kim, Yeonsang Park, Changwon Lee
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Abstract
A multi-wavelength surface plasmon laser that simultaneously emits surface plasmons having a large number of wavelengths and includes an active layer whose thickness changes with position, and a metal cavity whose length changes with position so that light of different wavelengths is emitted according to position. Surface plasmons are generated at the interface between a metal layer and a semiconductor layer in response to the light of different wavelengths. The surface plasmons having different wavelengths may be resonated in the metal cavity whose length changes with position and may be emitted to the outside.
Claims19
A surface plasmon laser comprising:
- a metal layer;
- a semiconductor layer that is disposed on an upper surface of the metal layer and includes an active layer whose thickness changes along a first direction which is parallel to the upper surface of the metal layer;
- and
- a first reflector and a second reflector that protrude from the upper surface of the metal layer, are extended from the upper surface of the metal layer, and are respectively disposed opposite a front and a back of the semiconductor layer,
- wherein the first reflector and the second reflector form a resonant cavity for surface plasmons generated at an interface between the metal layer and the semiconductor layer, and a length of a resonant cavity changes along the first direction.
An optoelectronic integrated circuit including a surface plasmon laser, wherein the surface plasmon laser comprises:
- a metal layer;
- a semiconductor layer that is disposed on an upper surface of the metal layer and includes an active layer whose thickness changes along a first direction which is parallel to the upper surface of the metal layer;
- and
- a first reflector and a second reflector that protrude from the upper surface of the metal layer, are extended from the upper surface of the metal layer, and are respectively disposed opposite a front and a back of the semiconductor layer,
- wherein the first reflector and the second reflector form a resonant cavity for surface plasmons generated at an interface between the metal layer and the semiconductor layer, and a length of a resonant cavity changes along the first direction.
Dependencies are inferred from the claim text.