Power semiconductor device and method of fabricating the same

A method of fabricating a power semiconductor device, comprising:

• preparing a first conductive type drift layer;
• forming a second conductive type body layer on the drift layer;
• forming a first gate by penetrating through the body layer and a portion of the drift layer;
• forming a segregation stop layer on a surface of the first gate;
• forming a gate insulating layer on the first gate on which the segregation stop layer is formed and filling the first gate with polysilicon;
• forming a first conductive type emitter layer in the body layer so as to be spaced apart from the first gate;
• forming a second gate covering upper portions of the body layer and the emitter layer on the first gate, as a flat type gate;
• and
• forming a collector layer below the drift layer,
• wherein the first conductive type emitter layer is not in contact with the gate insulating layer, such that all surfaces of the first conductive type emitter layer are not in contact with the gate insulating layer.