Power semiconductor module having low gate drive inductance flexible board connection

A power semiconductor module, comprising:

• a patterned metallization layer having a plurality of sections separated from one another;
• a plurality of power semiconductor dies attached at least to a first one of the sections of the patterned metallization layer and each having a first terminal and a second terminal disposed at a side of the die facing away from the patterned metallization layer;
• first interconnects attached to the first terminal of the power semiconductor dies;
• second interconnects attached to the second terminal of the power semiconductor dies;
• and
• a flexible board comprising a first metal layer, a second metal layer and an insulator between the first and the second metal layers so that the first and the second metal layers are electrically insulated from one another,
• wherein the first metal layer is attached to the first interconnects and the second metal layer is attached to the second interconnects such that the flexible board is spaced apart from the power semiconductor dies by the first and the second interconnects.

A method of manufacturing a power semiconductor module, the method comprising:

• attaching a power semiconductor die to a metallization layer, the power semiconductor die having a first terminal and a second terminal disposed at a side of the die facing away from the metallization layer;
• attaching a first interconnect to the first terminal and a second interconnect to the second terminal;
• providing a flexible board that comprises a first metal layer, a second metal layer and an insulator between the first and the second metal layers so that the first and the second metal layers are electrically insulated from one another;
• and
• attaching the first metal layer to the first interconnect and the second metal layer to the second interconnect such that the flexible board is spaced apart from the power semiconductor die by the first and the second interconnects.