Resistive random access memory (ReRAM) and conductive bridging random access memory (CBRAM) cross coupled fuse and read method and system

A resistive random access memory comprising first and second resistive memory devices configured as a memory cell and a cross coupled read circuit coupled with the first and second resistive memory devices for reading conductive state values thereof, wherein a one bit value is stored when the first and second resistive memory devices are programmed for different conductive state values,

• wherein sources of first and second transistors are coupled with respective ones of the first and second resistive memory devices, wherein the sources are degenerated by the connected first and second resistive memory devices and wherein first and second parasitic capacitors are coupled between the drains of the first and second transistors and a reference potential;
• and
• a diode connected transistor coupled to first and second transistors and adapted for sinking a reference current;
• wherein the resistive random access memory is configured to pre-charge the first and second parasitic capacitors and subsequently discharge the first and second parasitic capacitors through the first and second transistors wherein due to the different conductive states the capacitors are discharged with different slopes which is detected by the cross coupled read circuit.