Purification of a metalloid by consumable electrode vacuum arc remelt process
AssigneeConsarc Corporation
InventorRaymond J. Roberts
Life of this patent
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Abstract
A metalloid such as silicon in the form of a preheated solid electrode is purified by a CEVAR purification process by producing an ingot with controlled heating and cool down after the preheated electrode is melted in a CEVAR furnace system using a short CEVAR open-bottomed crucible.
Claims12
A method of producing a silicon ingot from a silicon electrode in a CEVAR purification process performed in a short CEVAR open-bottomed crucible disposed in a CEVAR furnace, the method comprising:
- heating the silicon electrode to a heated temperature below the melting point of the silicon electrode prior to initiation of the CEVAR purification process to form a preheated silicon electrode having a CEVAR process resistivity;
- melting the preheated silicon electrode by the CEVAR purification process for formation of a silicon ingot at an elevated temperature at the open bottom of the short CEVAR opened-bottomed crucible;
- passing the silicon ingot at the elevated temperature through a heating system adjacent to the short CEVAR open-bottomed crucible;
- and
- regulating the heating system to provide a temperature-controlled thermal environment for the silicon ingot at the elevated temperature as the silicon ingot exits the short CEVAR open-bottomed crucible to cool the silicon ingot without cracking.
A method of producing a silicon ingot from a silicon electrode in a CEVAR purification process performed in a short CEVAR open-bottomed crucible disposed in a CEVAR furnace, the method comprising:
- heating the silicon electrode to a heated temperature below the melting point of the silicon electrode in a heating chamber external to the CEVAR furnace to form a preheated silicon electrode having a CEVAR process resistivity;
- placing the preheated silicon electrode in the CEVAR furnace;
- melting the preheated silicon electrode by the CEVAR purification process for formation of a silicon ingot at an elevated temperature at the open bottom of the short CEVAR opened-bottomed crucible;
- passing the silicon ingot at the elevated temperature through a heating system adjacent to the short CEVAR open-bottomed crucible;
- and
- regulating the heating system to provide a temperature-controlled thermal environment for the silicon ingot at the elevated temperature as the silicon ingot exits the short CEVAR open-bottomed crucible to cool the silicon ingot without cracking.
Dependencies are inferred from the claim text.