US 9,337,799 B2Granted

Selective tuning of acoustic devices

AssigneeQUALCOMM MEMS Technologies, Inc.

InventorsPhilip Jason Stephanou, Chengjie Zuo, Changhan Hobie Yun, Sang-June Park, Charles Chengyea Leu, Jonghae Kim, Ravindra V. Shenoy

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Abstract

This disclosure provides implementations of methods, apparatus and systems for producing acoustic wave devices and for selectively modifying one or more acoustic or electromechanical characteristics of such devices. In one aspect, a method includes depositing a structural layer over a substrate. The structural layer includes a plurality of structural portions, each being positioned over a corresponding device region. The method also includes arranging a mask layer over the structural layer. The mask layer includes a plurality of mask portions, each including a number of mask openings that expose a corresponding region of the structural portion. The method also includes accelerating dopant particles toward the mask layer. The accelerated dopant particles that proceed through the mask openings are impacted into the corresponding structural portion. The impacted dopant particles modify material properties in the structural portion, which then effect a change in the acoustic or electromechanical characteristics of the acoustic wave device.

Claims14

Dependent claims

A device comprising:

a substrate;
a plurality of resonators on the substrate, the plurality of resonators including a plurality of sets of resonators, each set of resonators including one or more of the plurality of resonators, each of the resonators including:
at least one first electrode;
at least one second electrode;
a structural portion having a thickness between the at least one first electrode and the at least one second electrode, at least one resonant frequency of the resonator being based on the thickness;
and
a dopant particle concentration in the structural portion, the dopant particle concentration including one or more types of dopant particles, one or more acoustic characteristics of the resonator being based on the dopant particle concentration;
the thickness of the structural portion of each resonator being approximately equal to the thicknesses of the structural portions of all the other resonators and
the dopant particle concentration in the structural portion of each resonator in each set of resonators being approximately the same dopant particle concentration as in the other resonators of the set and different than the dopant particle concentration in the other resonators of all the other sets.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/667,918Filed 2 Nov 2012
Published: US 2014/0125432 A18 May 2014
Granted: 10 May 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H03H 9/02149
Means for compensation or elimination of undesirable effects: of ageing changes of characteristics, e.g. electro-acousto-migration
H03H 3/02
For the manufacture of electromechanical resonators or networks: for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 2003/021
For the manufacture of piezoelectric or electrostrictive resonators or networks: the resonators or networks being of the air-gap type
H03H 2003/025
For the manufacture of piezoelectric or electrostrictive resonators or networks: the resonators or networks comprising an acoustic mirror