A method for producing semiconductor microparticles, comprising the steps of:
- providing at least two fluids to be processed, including a first fluid and a second fluid, wherein at least one kind of the fluids to be processed is a fluid containing at least one kind of ion including an element that is a raw material of semiconductor;
- imparting predetermined pressure to at least the first fluid using a fluid pressure imparting mechanism;
- introducing the at least two fluids to be processed into a processing apparatus, the processing apparatus including at least two processing members to provide two processing surfaces, the two processing surfaces being arranged facing each other, the two processing surfaces including a first processing member and a second processing member, at least one of the two processing surfaces rotating relative to the other, the two processing surfaces being operable to approach to and separate from each other;
- rotating the first processing member and the second processing member relative to each other by using a rotation drive mechanism;
- introducing the at least two fluids to be processed into a space between the two processing surfaces;
- mixing the at least two fluids to be processed in the space between the two processing surfaces to form a thin film fluid between the two processing surfaces;
- and
- producing semiconductor microparticles in the thin film fluid,
- wherein:
- the semiconductor microparticles are obtained by reacting the element that is a raw material of semiconductor in the thin film fluid,
- each of the processing surfaces constitutes part of a sealed flow path through which the first fluid to be processed under the predetermined pressure is passed,
- the at least two fluids to be processed, at least one of which contains a reactant, are uniformly mixed and positively reacted between the processing surfaces,
- of the first and second processing members, at least the second processing member is provided with a pressure-receiving surface, and at least art of the pressure-receiving surface is comprised of the second processing surface,
- the pressure-receiving surface receives pressure applied to the first fluid by the fluid pressure imparting mechanism thereby generating a force to move in the direction of separating the second processing surface from the first processing surface,
- the first fluid to be processed under the predetermined pressure is passed between the first and second processing surfaces being capable of approaching to and separating from each other, at least one of the first and second processing surfaces rotating relative to the other, whereby the first fluid to be processed forms a thin film fluid while passing between both the processing surfaces,
- the processing apparatus comprises a second introduction path independent of the flow path through which the first fluid to be processed under the predetermined pressure is passed, and at least one opening leading to the second introduction path and being arranged in at least either the first processing surface or the second processing surface, and
- the second fluid to be processed sent from the introduction path is introduced into between the processing surfaces, and the at least two fluids, at least one of which contains the reactant, enable a state of desired reaction by mixing under uniform stirring in the thin film fluid.