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US 9,337,129 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeRohm Co., Ltd.
InventorsKoji Yasunaga, Shingo Takaki
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor element having an electrode facing a first direction; a first lead having a conductive distal end surface facing the electrode, and a rising portion which is connected to the distal end surface to extend away from the electrode; a conductive bonding material bonding the electrode of the semiconductor element to the distal end surface of the first lead; and a sealing resin covering the semiconductor element, at least a portion of the first lead, and the conductive bonding material.
Claims25
A semiconductor device comprising:
- a semiconductor element having an electrode facing a first direction;
- a first lead having a conductive distal end surface facing the electrode, and a rising portion which is connected to the distal end surface to extend away from the electrode;
- a conductive bonding material bonding the electrode of the semiconductor element to the distal end surface of the first lead;
- and
- a sealing resin covering the semiconductor element, at least a portion of the first lead, and the conductive bonding material,
- wherein the rising portion is inclined with respect to the first direction, and
- wherein a burr is formed in a portion of the distal end surface in an opposite side to a direction to which the rising portion is inclined.
4 more elements
Dependencies are inferred from the claim text.