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US 9,337,036 B2Granted
Method of forming copper sulfide film for reducing copper oxidization and loss
AssigneeMacronix International Co., Ltd.
InventorsZusing Yang, Hong-Ji Lee
Life of this patent
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Abstract
Effects of copper oxide formation in semiconductor manufacture are mitigated by etching with sulfide plasmas. The plasmas form protective copper sulfide films on copper surfaces and prevent copper oxide formation. When copper oxide formation does occur, the sulfide plasmas are able to transform the copper oxide into acceptable or more conductive copper compounds. Non-oxide copper compounds are removed using clear wet strips.
Claims20
A method of semiconductor manufacture, comprising:
- providing a semiconductor stack on a substrate to include a first intermetal dielectric (IMD-1) layer, a copper (Cu) layer in the IMD-1 layer, a silicon nitride (SiN) layer, and a second intermetal dielectric (IMD-2) layer above the SiN layer;
- forming an opening that exposes at least a portion of an upper surface of the Cu layer;
- contacting the exposed portion of the Cu layer with a sulfide plasma, thereby causing a film including copper sulfide to form on the upper surface of the Cu layer;
- and
- forming a Ti-containing material in the opening.
2 more elements
Dependencies are inferred from the claim text.