Power module

A power module comprising:

• a power semiconductor device;
• a first conductive member that is fixed to the power semiconductor device by a metal bonding member;
• and
• a second conductive member that is bonded to the first conductive member by an insulating sheet made from a resin, the insulating sheet being bonded to the first and second conductive members by thermocompression bonding, wherein
• when a thickness of the insulating sheet is di (mm), a relative permittivity of the insulating sheet is ∈r, a surge voltage generated between the conductive members is Vt (V), and a lowest atmospheric pressure to which the power module is exposed is p (atm), di and ∈r are set so as to satisfy a relation of di>(1.36×10−8×Vt2+3.4×10−5×Vt−0.015)×∈r/p, and
• when an insulating layer and an air layer are present in series in an equivalent circuit between the first and second conductive members, a discharge is suppressed.

A power module comprising:

• a power semiconductor device;
• a first conductive member that is fixed to the power semiconductor device by a metal bonding member;
• and
• a second conductive member that is bonded to the first conductive member by an insulating sheet made from a resin, the insulating sheet being bonded to the first and second conductive members by thermocompression bonding, wherein
• when a thickness of the insulating sheet is di (mm), a relative permittivity of the insulating sheet is ∈r, a surge voltage generated between the conductive members is Vt (V), and an allowable thickness of any one of voids present in an interface between the insulating sheet and the conductive member and voids included in the insulating sheet is db (mm), di and ∈r are set so as to satisfy a relation of di>(1.36×10−8×Vt2+3.4×10−5×Vt−0.015)×∈r+db, and
• when an insulating layer and an air layer are present in series in an equivalent circuit between the first and second conductive members, a discharge is suppressed.

A power module comprising:

• a power semiconductor device;
• a first conductive member that is fixed to the power semiconductor device by a metal bonding member;
• and
• a second conductive member that is bonded to the first conductive member by an insulating sheet made from a resin, the insulating sheet being bonded to the first and second conductive members by thermocompression bonding, wherein
• when a thickness of the insulating sheet is di (mm), a relative permittivity of the insulating sheet is ∈r, a surge voltage generated between the conductive members is Vt (V), an allowable thickness of any one of voids present in an interface between the insulating sheet and the conductive member and voids included in the insulating sheet is db (mm), and a lowest atmospheric pressure to which the power module is exposed is p (atm), di and ∈r are set so as to satisfy a relation of di>((1.36×10−8×Vt2+3.4×10−5×Vt−0.015)×∈r+db)/p, and
• when an insulating layer and an air layer are present in series in an equivalent circuit between the first and second conductive members, a discharge is suppressed.