Optoelectronic semiconductor chip, display comprising a semiconductor chip of this type, and use of a semiconductor chip of this type or of a display

An optoelectronic semiconductor chip comprising:

• a semiconductor layer sequence having an active layer configured to generate radiation,
• wherein the semiconductor chip can be operated in a first operating mode and in a second operating mode,
• wherein the semiconductor layer sequence emits radiation in the first operating mode,
• wherein the semiconductor layer sequence emits no radiation in the second operating mode,
• wherein, in the first operating mode, a first operating current flows in a forward direction through the semiconductor layer sequence,
• wherein, in the second operating mode, a second operating current flows in a reverse direction such that a temperature of the semiconductor layer sequence is higher by at least 2° C. than a temperature of the semiconductor layer sequence in a switched-off operating state,
• wherein the semiconductor layer sequence is operated in the forward direction in the first operating mode and in the reverse direction in the second operating mode;
• and
• wherein an absolute value of a current intensity of the second operating current is 10% or less than an absolute value of the current intensity of the first operating current.

A method for operating a semiconductor chip, wherein the semiconductor chip comprises a semiconductor layer sequence having an active layer for generating radiation, the method comprising:

• operating the semiconductor chip in a first operating mode by a first operating current flowing in a forward direction through the semiconductor layer sequence so that the semiconductor layer sequence emits radiation;
• and
• operating the semiconductor chip in a second operating mode by a second operating current flowing in a reverse direction so that the semiconductor layer sequence does not emit radiation,
• wherein a temperature of the semiconductor layer sequence, when operated in the second operating mode, is kept higher by at least 2° C. than a temperature of the semiconductor layer sequence in a switched-off operating state, and
• wherein an absolute value of a current intensity of the second operating current is 10% or less than of an absolute value of the current intensity of the first operating current.